Compact Modeling

Papers:

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

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The compact model HiSIM2 supports RF-circuit applications with advanced MOSFETs and is a further development of HiSIM1 which has been released since 2001 for public usage. Important features, required for the real applications, are summarized. [...]

Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling

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In this paper, we extend our unified regional approach to bulk-MOS charge modeling with non-pinned surface potential for various device structures such as PD/FD/UTB SOI and s-DG MOSFETs, including strained-Si channel. The regional solutions make [...]

On the Modeling of the Current-Voltage Characteristics of a Symmetrical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with an Undoped Body

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Three general classes of solutions are needed to model an arbitrary double-gate (DG) metal-oxide-semiconductor (MOS) capacitor with arbitrary bias conditions. The “zero-field” (F0) and the “zero-potential” (P0) solution regimes are separated by the “zero-field and [...]

Comprehensive Characterization and Analysis of RTS, 1/f, RF Noise and Power Performances of Schottky-Diode in Standard CMOS

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This study presents comprehensive characterization of Schottky-diode in standard CMOS on its DC, low-frequency and RF noise performance. Random-telegraph-signal (RTS) and 1/f noise have been characterized, along with RF noise, power performances analysis. Results showed [...]

Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 0-9767985-8-1