Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

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The compact model HiSIM2 supports RF-circuit applications with advanced MOSFETs and is a further development of HiSIM1 which has been released since 2001 for public usage. Important features, required for the real applications, are summarized. [...]

The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs

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Fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is developed. HiSIM-SOI solves surface potentials at all three SOI-surfaces along the depth direction self-consistently. Besides comparison to measured I-V characteristics, the model is verified with 1/f noise [...]