Lee Y.M. – TechConnect Briefs

Modeling MOSFET Process Variation using PSP

Lee Y.M., Park J-E, Watts J.S., IBM, US

The PSP model has been extensively evaluated for it’s abililty accurately match IV and CV characteristics MOSFETs measured on a single die. This enables accurate prediction of circuit behavior for circuits made of transistors which [...]

Silver Particle and Silver Thiolate-Based Molecular Sensing/Recognition Units Operating via Surface-Enhanced Raman Scattering

Kim K., Kim N.H., Lee H.S., Lee Y.M., Park H.K., Seoul National University, KR

Noble metallic nanostructures exhibit a phenomenon known as surface-enhanced Raman scattering (SERS) in which the scattering cross sections are dramatically enhanced for molecules adsorbed thereon. We demonstrate that commercially available Ag(μAg) powders can be used [...]

A Simple Yet Accurate Mismatch Model For Circuit Simulation

Bonaccio A.R., Jin Z., Lee Y.M., Pai N.G., Schroer G.J., Watts J.S., IBM, US

As technology scales, mismatch between a pair of transistors becomes a more and more critical issue for technology development and circuit designs. Scaling also increases the complexity of compact device modeling. Sophisticated models are usually [...]

SPICE Modeling of Multiple Correlated Electrical Effects of Dopant Fluctuations

Cook D., Grundon S., Howard J., Lee Y.M., Watts J., IBM Semiconductor Research and Developement Center, US

We proposed a new methodology capable of accurately modeling the partial correlations and geometric dependency in the local random fluctuations of various electrical parameters. This method incorporates principal factor analysis (PFA) into the conventional SPICE-based [...]