This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include surface potential equation, generalized symmetric linearization method and non-uniformity of the vertical impurity profile.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 604 - 609
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling