An Effective Mobility Model for Tunneling Double-Gate MOSFET (T-FinFET)
Chan M., He J., He X., Hu G., Li C., Liu J., Ma G., Pan J., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
We have derived an analytical model for the effective field (Eeff) model of undoped Ultra-Thin Body (UTB) Double Gate (DG) SOI Tunneling MOSFETs ( T-FinFET) from the solution of the Poisson’s equation in this paper [...]