Chan M. – TechConnect Briefs

An Effective Mobility Model for Tunneling Double-Gate MOSFET (T-FinFET)

Chan M., He J., He X., Hu G., Li C., Liu J., Ma G., Pan J., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

We have derived an analytical model for the effective field (Eeff) model of undoped Ultra-Thin Body (UTB) Double Gate (DG) SOI Tunneling MOSFETs ( T-FinFET) from the solution of the Poisson’s equation in this paper [...]

Reliability-Aware Device Modeling and Implications on Circuit Aging Simulations

Chan M., Ma C., Zhang L., Hong Kong University of Science and Technology, HK

Device reliability and circuit aging are becoming key design concerns with advanced CMOS technologies. In the traditional way, a reliability model describing the device parameter shifts in the time domain is independent of a device [...]

Developing a Common Compact Modeling Platform for Model Developers and Users

Chan M., Zhang L., HKUST, HK

With the recent advance of CMOS technology to the 32nm range, there is a major concern to continue the scaling roadmap. Many new devices have been proposed, but selecting the right structure is not a [...]

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation

Chan M., Du C., He J., He Q., Ma C., Wang W., Wu W., Ye Y., Zhang X., Zhao W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from [...]

An Analytic Potential Based Model for Gate-All-Around Nanowire Tunnel-FETs

Chan M., He J., Liu Y., Peking University Shenzhen SOC Key Laboratory, CN

In this paper, an analytic potential based current model of the gate-all-around (GAA) silicon nanowire tunnel-FETs (NW-TFETs) is proposed based on the surface potential solutions at the channel direction and considering band to band tunneling [...]

A Physics Based Potential Model for Cylindrical Surrounding Gate MOSFETs with SiO2- Core Si-Shell Structure

Chan M., Du C., He J., Wang W., Wu W., Ye Y., Zhang X., Zhao W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is [...]

Application of Multi-frequency Test and Neural Network to Fault Diagnosis in Analog Circuits

Chan M., He J., Liang H-L, Mei J., Wang C., Wang H., Ye Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

In this paper, the multi-frequency test and neural networks (NNs) are applied to fault diagnosis in analog circuits. The reason is that multi-frequency test can maximize differences between the failure and the normal circuit’s response, [...]

Numerical Study on Gate-All-Around Tunneling FET with SiO2 Core and Si Shell Structure

Chan M., He H., He J., Mei J., Zhang A., Zhang L., Zhang X., PKU-HKUST Shenzhen-Hongkong Institution, CN

This work presents a gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET) and demonstrates its performance characteristics via the numerical simulation method. The 3-D T-CAD numerical simulations demonstrate that this new [...]

i-MOS: A Platform for Compact Modeling Sharing

Chan M., Wang H., HKUST, HK

The interactive Modeling and Online Simulation (i-MOS) platform is designed as a service for model developers to disseminate their models. With a simple user interface, users can perform model evaluation and circuit simulation over a [...]

Field-Based 3D Capacitance Modeling for sub-45-nm On-Chip Interconnect

Chan M., Chen A., He J., Ye Y., Zhang A., Zhao W., Beijing University of Aeronautics and Astronautics, CN

Considering both two-dimensional and three-dimensional single wire above plate, the proposed method decomposes the electric field into various regions and gives solutions for each part. The total ground capacitance is the summation of all components. [...]