Rustagi S.C. – TechConnect Briefs

Unified Compact Model for Generic Double-Gate MOSFETs

Chandrasekaran K., Lim G.H., Lin S-H, Rustagi S.C., See G.H., Wei C.Q., Zhou X., Zhu G.J., Zhu Z.M., Nanyang Technological University, SG

A generic double-gate (DG) MOSFET follows a generalized (input) voltage equation from the first integral of Poisson equation and Gauss' law at the two gates, which is implicit and, in general, non-integrable when the channel [...]

Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

Chandrasekaran K., Chiah S.B., Rustagi S.C., See G.H., Shangguan W., Singh N., Zhou X., Zhu Z.M., Nanyang Technological University, SG

A compact model for the explicit surface potential equation of doped symmetric double-gate MOSFET from Poisson equation with regional approach is presented. It’s scalable for all doping and channel thicknesses and has been proved to [...]