Federal University of Santa Catarina

MOSFET threshold voltage: definition, extraction, and applications

Galup-Montoro C., Machado M.B., Schneider M.C., Siebel O., Federal University of Santa Catarina, BR

The threshold voltage VT is a fundamental parameter in the characterization of MOS transistors and should be used, whatever is the adopted model for the transistor. The classical definition of threshold: phis = 2phiF +V [...]

A Setup for Automatic MOSFET Mismatch Characterization under a Wide Bias Range

Galup-Montoro C., Klimach H., Schneider M.C., Federal University of Santa Catarina, BR

Mismatch is the denomination of time-independent variations between identically designed components. In analog circuits, the spread in the dc characteristics of supposedly matched transistors results in inaccurate or even anomalous circuit behavior. Also, for digital [...]

Consistency of compact MOSFET models with the Pao-Sah formulation: consequences for small-signal analysis

Cunha A.I.A., Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

Compact models for the MOSFET are based on the decomposition of the two-dimensional problem into two one-dimensional problems. Since a compact MOSFET model core consists of an input voltage equation, and an output current equation, [...]

Charge-Based Formulation of Thermal Noise in Short-Channel MOS Transistors

Galup-Montoro C., Paim V.C., Schneider M.C., Federal University of Santa Catarina, BR

In this communication we present a charge-based formulation for the thermal noise in short-channel MOS transistors. We arrive at a closed expression for the channel noise including velocity saturation for all the operating regions of [...]

Interrelations between Threshold Voltage Definitions and Extraction Methods

Cunha A.I.A., Galup-Montoro C., Machado M.B., Schneider M.C., Federal University of Santa Catarina, BR

This paper presents a brief discussion on the main MOSFET threshold voltage definitions available in the literature as well as on associated extraction methodologies. In order to compare these definitions and methodologies, we take advantage [...]

Compact Modeling of Nonlinearities in Submicron MOSFETs

da Silva P.D., de Sousa F.R., Montoro C.G., Schneider M.C., Federal University of Santa Catarina, BR

Low power operation in RF CMOS circuits requiring low-distortion levels is often difficult to achieve due to the exponential relationship between drain current (IDS) and gate-to-source voltage (VGS) in subthreshold region. Our contribution in this work [...]

Symbolic charge-based MOSFET model

Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

The new generation of compact MOSFET models provides accurate current, charge, capacitance and noise characteristics as numerical outputs of a rather complicated set of internal equations specific to each model. Clearly, numerical circuit simulation is [...]

Unambiguous Extraction of Threshold Voltage Based on the Transconductance-to-Current Ratio

Caetano C.D.C., Cunha A.I.A., Galup-Montoro C., Machado M.B., Schneider M.C., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the threshold voltage. The procedure is based on the expressions of the Advanced Compact MOSFET (ACM) model, valid in all regimes of operation, which assures physical [...]

Extraction of Mosfet Effective Channel Length and Width Based on the Transconductance-To-Current Ratio

Caetano C.D.C., Cunha A.I.A., Galup-Montoro C., Machado M.B., Schneider M.C., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the effective channel length and width, which is independent of the determination of the threshold voltage. The procedure is based on measurement of the transconductance-to-current ratio [...]