A Compact Model for SiC Junction Barrier Schottky Diode for High-Voltage and High-Temperature Applications

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SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, [...]

Compact Modeling of Long-Term MOSFET Degradation for Predicting Circuits Degradation

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[Introduction] Prediction methods of long-term degradation of both p- and n-type metal oxide semiconductor field effect transistors (MOSFETs) in CMOS circuits is proposed. During CMOS circuit degradation, not all the MOSFETs but only several MOSFETs [...]

HiSIM-HV: a complete surface-potential-based MOSFET model for High Voltage Applications

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We present here the high-voltage MOSFET model HiSIM-HV based on the complete surface-potential description. The model is valid both for symmetrical and asymmetrical structures with scaling properties for any structural variations valid for wide range [...]