Chen Q. – TechConnect Briefs

Bulk-Size Transparent Gadolinium Oxide-Polymer Nanocomposites for Gamma Ray Scintillation

Chen Q., Cai W., Hajagos T., Kishpaugh D., Liu C., Cherepy N., Dooraghi A., Chatziioannou A., Payne S., Pei Q., University of California, Los Angeles, US

Heavy element loaded polymer composites have long been proposed to detect high energy X- and -rays upon scintillation. The previously reported bulk composite scintillators have achieved limited success because of the diminished light output resulting [...]

Bulk-Size Transparent Gadolinium Oxide-Polymer Nanocomposites for Gamma Ray Scintillation

Chen Q., Cai W., Hajagos T., Kishpaugh D., Liu C., Cherepy N., Dooraghi A., Chatziioannou A., Payne S., Pei Q., University of California, Los Angeles, US

Heavy element loaded polymer composites have long been proposed to detect high energy X- and -rays upon scintillation. The previously reported bulk composite scintillators have achieved limited success because of the diminished light output resulting [...]

Analog/RF Performance Analysis of Coaxial Carbon Nanotube MOSFET from non-Equilibrium Green’s Function Simulation

Che Y., Chen Q., Liang H., Chen Q., Wang C., He H., Cao Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

the analog/RF performance of Coaxial Carbon Nanotube Field Effect Transistor (CNTFET) including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details in this paper based on the non-equilibrium [...]

Upconverting Nanophosphors for High Temperature Sensing Applications

Guo X., Zhao H., Song H., Chen Q., Li K.K., Zou Y.K., Jiang H., Combs C., Narayanaswamy V., Clemens N., Boston Applied Technologies, Inc., US

In this work, a unique upconverting thermographic phosphor technique was developed for overcoming the difficulties encountered currently in the down-conversion route. Upconverting nanopowders of rare earths doped refractory oxides were synthesized through a wet chemical [...]

Low Cost Paper Based Bowtie Tag Antenna for High Performance UHF RFID Applications

Amin Y., Prokkola S., Shao B., Hållstedt J., Chen Q., Tenhunen H., Zheng L-R, Royal Institute of Technology (KTH), SE

In this paper, we have realized a bowtie antenna for UHF RFID Tag with extended round corners for the first time printed on paper substrate. The state of the art CAD tool Ansoft® HFSS is [...]

Improvement of electric energy density in PVDF terpolymer nanocomposites and blends

Chu B., Neese B., Lin M., Zhou X., Chen Q., Zhang Q.M., The Penn State University, US

Large enhancement in the electric energy density and electric displacement level were found in nanocomposites of poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (PVDF-TrFE-CFE) relaxor ferroelectric polymer/ZrO2 nanoparticles. Through the interface effect the presence of the nanoparticles (with only 1.6 [...]

Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits

Chen Q., Suryagandh S., Goo J-S, An J.X., Thuruthiyil C., Icel A.B., Advanced Micro Devices, US

The impact of the gate induced drain leakage and impact ionization currents on hysteresis of PD FB SOI circuits is examined, and a physical understanding is provided. Measured silicon data from 90nm and 65nm PD [...]

On Idlow with Emphasis on Speculative SPICE Modeling

Chen Q., Wu Z-Y, Icel A.B., Goo J-S, Krishnan S., Thuruthiyil C., Subba N., Suryagandh S., An J.X., Ly T., Radwin M., Yonemura J., Assad F., Advanced Micro Devices, US

An empirical correlation model of Idlow, the MOSFET drain current measured at Vgs=Vdd/2 and Vds=Vdd, where Vdd is the supply voltage, is proposed based on the alpha-power law model. It enables a comprehensive analysis of [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

An A Priori Hysteresis Modeling Methodology for Improved Efficiency and Model Accuracy in Advanced PD SOI Technologies

Chen Q., Goo J-S, Subba N., Cai X., An J.X., Ly T., Wu Z-Y, Suryagandh S., Thuruthiyil C., Radwin M., Zamudio L., Yonemura J., Assad F., Pelella M.M., Icel A.B., Advanced Micro Devices, US

Exploiting the asymmetric nature of interactions among hysteresis, “nonFET”, and DC characteristics, an a priori hysteresis modeling methodology has been proposed as an essential part of an improved model extraction flow for advanced PD SOI [...]