Zhang X. – TechConnect Briefs

Integrated Surface-Enhanced Raman Spectroscopy Sensors for Process Monitoring

Zhang K., Zhang X., Rabin O., Zhang K., Zhang X., Briber R.M., von Bredow H., Metting C., Atanasoff G., University of Maryland, US

Optical metamaterials obtain their unique properties from the combination of nanoscale plasmonic components and dielectric components. Reproducible mass-production of metamaterials is challenging but desirable for applications such as surface-enhanced Raman scattering (SERS) for chemical sensing. [...]

An Enzyme-Responsive Controlled Release Drug Delivery System Based on Mesoporous Silica and DNA

Zhang X., Wu Z., Hefei Institutes of Physical Science, Chinese Academy of Sciences, CN

An efficient enzyme-responsive controlled release drug delivery system was fabricated using functional mesoporous silica nanoparticles (FMSN) encapsulated with the single-stranded DNA. Based on the electrostatic interactions between FMSN and single-stranded DNA, the DNA coating could [...]

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation

Ma C., He J., He Q., Chan M., Du C., He J., He Q., Ye Y., Zhao W., Wu W., Zhang X., Wang W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from [...]

A Physics Based Potential Model for Cylindrical Surrounding Gate MOSFETs with SiO2- Core Si-Shell Structure

Zhang X., He J., Chan M., Du C., Ye Y., Zhao W., Wu W., Wang W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is [...]

Mobility of paramagnetic nanoparticles in porous media

Wang Y., Bagaria H., Zhang X., Johnson K., Abriola LM., Pennell KD., Tufts University, US

Stable paramagnetic nanoparticles were prepared and their mobility in reservoir matrix was measured as a function of particle mass loading, rate of sulfonate fraction in coating polymer, and the presence of surfactant.

Pretreatment and Fractionation of Wheat Straw for Production of Fuel Ethanol and Value-added Co-products in a Biorefinery

Zhang X., Nghiem N.P., USDA ARS Eastern Regional Research Center, US

Wheat straw was used to demonstrate a process for production of ethanol and value-added co-products. The pretreatment of wheat straw was carried out using the soaking in aqueous ammonia (SAA) process. The pretreated wheat straw [...]

Pretreatment and Fractionation of Wheat Straw for Production of Fuel Ethanol and Value-added Co-products in a Biorefinery

Zhang X., Nghiem N.P., USDA ARS Eastern Regional Research Center, US

Wheat straw was used to demonstrate a process for production of ethanol and value-added co-products. The pretreatment of wheat straw was carried out using the soaking in aqueous ammonia (SAA) process. The pretreated wheat straw [...]

Mobility of paramagnetic nanoparticles in porous media

Wang Y., Bagaria H., Zhang X., Johnson K., Abriola LM., Pennell KD., Tufts University, US

Stable paramagnetic nanoparticles were prepared and their mobility in reservoir matrix was measured as a function of particle mass loading, rate of sulfonate fraction in coating polymer, and the presence of surfactant.

Numerical Study on Gate-All-Around Tunneling FET with SiO2 Core and Si Shell Structure

Zhang A., Zhang L., Zhang X., Zhang A., Zhang L., Zhang X., Mei J., Zhang A., Zhang L., Zhang X., He H., He J., He H., He J., Chan M., PKU-HKUST Shenzhen-Hongkong Institution, CN

This work presents a gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET) and demonstrates its performance characteristics via the numerical simulation method. The 3-D T-CAD numerical simulations demonstrate that this new [...]

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Zhang X., Peking University, CN

The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF [...]