A unified parameters extraction procedure for temperature and geometry scalable bipolar transistor model Mextram has been demonstrated using an example of high-speed SiGe HBT technology. The essential feature of the proposed methodology is a direct extraction of the scaling parameters from the measured electrical characteristics and the model parameters are extracted only once for a single reference geometry.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 872 - 875
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling