Inagaki R. – TechConnect Briefs

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Miura-Mattausch M., Sadachika N., Miyake M., Navarro D., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Inagaki R., Furui Y., Hiroshima University, JP

HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an [...]

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

Miura-Mattausch M., Navarro D., Sadachika N., Suzuki G., Takeda Y., Miyake M., Warabino T., Machida K., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kumashiro S., Inagaki R., Miyamoto S., Hiroshima University, JP

The compact model HiSIM2 supports RF-circuit applications with advanced MOSFETs and is a further development of HiSIM1 which has been released since 2001 for public usage. Important features, required for the real applications, are summarized. [...]

RF-MOSFET Model Parameter Extraction with HiSIM

Miura-Mattausch M., Sadachika N., Murakawa M., Mimura S., Higuchi T., Itoh K., Inagaki R., Iguchi Y., Hiroshima University, JP

This paper discusses a feasibility of an automatic parameter extraction method with the GA (Genetic Algorithm) for surface-potential-based MOSFET model HiSIM (Hiroshima-university STARC IGFET Model), where all device characteristics are described as functions of the [...]