This paper presents a brief discussion on the main MOSFET threshold voltage definitions available in the literature as well as on associated extraction methodologies. In order to compare these definitions and methodologies, we take advantage of the Advanced Compact MOSFET (ACM) model, which accurately relates surface potential to inversion charge density in all regions of operation. A new robust and precise extraction method based on the transconductance-to-current ratio characteristic is proposed, compared with already existing methods, and experimentally verified in 0.18 micrometer CMOS technology.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 868 - 871
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling