Scholten A.J. – TechConnect Briefs

RF-noise modeling in MOSFETs: excess noise, symmetry, and causality

Juge A., Klaassen D.B.M., Pijper R.M.T., Scheer P., Scholten A.J., Smit G.D.J., Tiemeijer L.F., van der Toorn R., NXP Semiconductors, NL

Modeling of RF-noise in MOSFET channels is one of the cornerstones for RF-CMOS-circuit design. Deep sub-micron technology nodes necessitate a proper treatment of excess noise as well as detailed modeling of parasitics. In addition, demanding [...]

A PSP based scalable compact FinFET model

Gildenblat G., Klaassen D.B.M., Mercha A., Pijper R.M.T., Scholten A.J., Serra N., Smit G.D.J., van Langevelde R., NXP Semiconductors, NL

A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly [...]

Theory and Modeling Techniques used in PSP Model

Gildenblat G., Jha A., Klaassen D.B.M., Li X., Scholten A.J., Smit G.D.J., van Langevelde R., Wang H., Wu W., Pennsylvania State University, US

This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include [...]

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Havens R.J., Klaassen D., Scholten A.J., Tiemeijer L.F., van Langevelde R., Venezia V.C., Zegers-van Duijnhoven A.T.A., Philips Research Laboratories Eindhoven, NE

The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the [...]

Recent Enhancements of MOS Model 11

Klaassen D.B.M., Scholten A.J., van Langevelde R., Philips Research Laboratories, NL

MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, [...]

Compact Modelling of High-Voltage LDMOS Devices

Aarts A.C.T., Klaassen D.B.M., Scholten A.J., van der Hout R., van Langevelde R., Willemsen M.B., Philips Research Laboratories, NE

In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances [...]

Authors: Scholten A.J.

RF-noise modeling in MOSFETs: excess noise, symmetry, and causality

A PSP based scalable compact FinFET model

Theory and Modeling Techniques used in PSP Model

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Recent Enhancements of MOS Model 11

Compact Modelling of High-Voltage LDMOS Devices

Introduction to PSP MOSFET Model

Recent Enhancements of MOS Model 11

Noise Modeling with MOS Model 11 for RF-CMOS Applications

RF Applications of MOS Model 11