Charge-storage calculation for Si-based bipolar transistors from device simulation


Keywords: , ,

Various methods for calculating regional charge storage components in bipolar transistors from
device simulation results are compared with respect to their usefulness for compact modeling. The
methods are evaluated for Si and SiGe transistors with very different doping profiles representing
existing process technologies. Causes for the failure of certain methods are discussed. A selected
method is then applied to a regional analysis of bias dependent compact model components.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 735 - 740
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1