The current standard diode junction capacitance models do not yield high quality models for hyperabrupt junction varactors that are constructed from several implants. We describe a new enhancement that employs the actual (exponential) doping profiles that does yield good fits and physical parameters.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 842 - 845
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling