Compact models form an integral part of any circuit design environment, ranging from analog and digital design to mixed-signal design worlds. The models need to be developed and improved in parallel with technology advancements to enable an efficient and quick adoption of the new technologies. Towards this end, BSIM models have continuously addressed the modeling challenges posed by N+1 and N+2 technology nodes. In this paper, the progress made towards enhancing the bulk MOSFET model BSIM4 and the Multi-Gate transistor model BSIM-MG are presented.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 658 - 661
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling