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HomeAuthorsWang W.

Authors: Wang W.

Gait Analysis and Classification of Restricted Knee

Chen Xi, Tang K., Wang W., Yu J., Beijing Institute of Technology, CN
This paper presents a technique of restricted knee gait analysis and classification based on electrostatic sensing, which can be applied in home nursing of patients with exercise rehabilitation. The technique is used to monitor the [...]

A New Method to Fin-width Line Edge Roughness Effect Simulation of FinFET Performance

Feng Z., He J., He P., Song L., Wang W., Wu W., Zhao W., Zhu Y., Peking University Shenzhen SOC Key Laboratory, CN
This paper developed a full three-dimensional (3-D) statistical simulation method to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic [...]

A Full Differential Charge Pump Based on Symmetrical Complementary Half-Current Circuit Architecture

Du C., Feng Z., He J., He P., Huang Q., Song L., Wang W., Wu W., Zhao W., Peking University Shenzhen SOC Key Laboratory, CN
A full differential charge pump with low current mismatch and deviation is designed in this paper based on the symmetric complementary half-current circuit architecture. It adopts two symmetrical complementary P-N replica circuits with half value [...]

Development and Testing of Thermosensitive Poly(NIPAm-AA)/Nano-SiO2 Composite Blocking Agent for Shale Gas Drilling Operations

Cao J., Chen G., Huang W., Qiu Z., Wang W., Zhong H., China University of Petroleum, CN
Nanotechnology has already contributed significantly to technological advances in energy industry and has the potential to revolutionize the drilling industry. Traditional blocking agents are difficult to form effective mud cake to prevent liquid penetration due [...]

An inkjet printed NO2 sensor operating under room temperature and low humidity environment

Chuang W-Y, Lin C-T, Su Y-C, Wang W., Wu W-J, National Taiwan University, TW
A room temperature operation NO2 sensor base on polypyrrole (PPy) /AZO (5% Al-doped ZnO) sensing material was developed. For the environmental monitoring, the ambient factor effect for NO2 detection was further discussed. Based on the [...]

Hydrothermal Synthesis of Silver Nanowires and Application as Transparent Conductive Materials

Calverley E.M., Collins R.M., George A.L., Goss J.M., Kuo T.-C., Lunn J.D., Malek A., McGough P.T., Todd C.C., Wang W., The Dow Chemical Company, US
A scalable hydrothermal synthesis for silver nanowires has been developed. The new synthetic route is expected to be compatible with industrially available reactor systems and offer environmental and safety advantages due to use of aqueous [...]

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation

Chan M., Du C., He J., He Q., Ma C., Wang W., Wu W., Ye Y., Zhang X., Zhao W., PKU-HKUST Shenzhen-Hongkong Institution, CN
A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from [...]

Compact Negative Bias Temperature Instability Model for Nanoscale FinFET Reliability Simulation

He J., Liu Y., Wang W., Wu W., Ye Y., Zhang C., Zhao W., Peking University Shenzhen SOC Key Laboratory, CN
A compact Negative Bias Temperature Instability (NBTI) model, which is based on a novel Reaction-Trapping (R-T) theory, is proposed to predict the static and dynamic NBTI degradation in nanoscale FinFET reliability simulation. This R-T theory [...]

A Physics Based Potential Model for Cylindrical Surrounding Gate MOSFETs with SiO2- Core Si-Shell Structure

Chan M., Du C., He J., Wang W., Wu W., Ye Y., Zhang X., Zhao W., PKU-HKUST Shenzhen-Hongkong Institution, CN
A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is [...]

Analytic Model forAmorphous GST OTS in Phase Change Memory Cell with Hopping Transport

Cao Y., He J., Wang C., Wang H., Wang W., Ye Y., PKU-HKUST Shenzhen-Hongkong Institution, CN
This paper presents an analytic model for amorphous GST OTS in phase-change-memory cell with the hopping transport mechanism, which is widely used in the organic semiconductor device simulation. In this work an equivalent hopping probability [...]

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