Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model

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This paper examines certain aspects of the base resistance model of HiCUM (High Current Model) to address convergence problems seen during 2-tone distortion simulations of SiGe HBTs. Here, we propose some changes to the model implementation and incorporate them in ADS simulator. This resulted in excellent agreement between the inter-modulation distortion measurements and the model.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 765 - 767
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 0-9767985-8-1