Comprehensive Characterization and Analysis of RTS, 1/f, RF Noise and Power Performances of Schottky-Diode in Standard CMOS

Xiong Y.Z., Lo G.Q., Loh W.Y., Shi J.L., Yu M.B., Loh W.Y., Kwong D.L.
Institute of Microelectronics, Singapore, SG

Keywords: 1/f noise, characterization, modeling, RF noise, RF power, Schottky diode

This study presents comprehensive characterization of Schottky-diode in standard CMOS on its DC, low-frequency and RF noise performance. Random-telegraph-signal (RTS) and 1/f noise have been characterized, along with RF noise, power performances analysis. Results showed that Schottky diodes in standard CMOS are excellent choices for low-noise and high-speed RFIC applications.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 761 - 764
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1