Newton K.M. – TechConnect Briefs

Investigation of Substrate Current Effects and Modeling of Substrate Resistance Network for RFCMOS

Lee J.C., Anna R.B., Sweeney S.L., Pan L.H., Newton K.M., IBM Corporation, US

RF device models focus on device performance in the high frequency region, with a reasonable DC model. The substrate current (Isub) is often regarded as unimportant in the DC model and thus ignored because the [...]

BSIM Model for MOSFET Flicker Noise Statistics: Technology Scaling, Area, and Bias Dependence

Ertürk M., Anna R., Newton K.M., Xia T., Clark W.F., IBM Systems and Technology Group, US

We have implemented a statistical model for MOSFET flicker noise as an extension to BSIM. Model development methodology and hardware correlation for various types of MOSFETs from 180nm and 130nm technology nodes are presented. Given [...]

Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model

Malladi R.R., Borich V., Sweeney S.L., Rascoe J., Newton K.M., Venkatadri S., Yang J., Chen S., IBM Systems and Technology, US

This paper examines certain aspects of the base resistance model of HiCUM (High Current Model) to address convergence problems seen during 2-tone distortion simulations of SiGe HBTs. Here, we propose some changes to the model [...]

Development and Design Kit Integration of a Scalable and Statistical High Current Model for Advanced SiGe HBTs

Malladi R.M., Newton K.M., Schroter M.S., IBM Systems and Technology, US

In this invited paper, we present the methodology for advanced SiGe HBT modeling and its integration into BiCMOS design kits. We review various model choices and describe, in detail, the extraction of the High Current [...]