In order to build an analytical model of an undoped symmetric DG SOI MOSFET devices, an accurate but rather difficult method was used by S. Malobabic et.al.  in their papers that is based on complicated Lambert function for the potential calculation and is using smoothing parameters without physical meaning. The purpose of this paper is to show an original, simple and efficient analytical method for the calculation of electrostatic potentials and charges of such a novel device.
By using the new method, we show the dependence of the silicon electrostatic potentials as a function of VGS for different silicon thicknesses in comparison with the results obtained by S. Malobabic et.al. having the function Lambert as method of computation of the electrostatic potentials, based on smoothing parameters without physical meaning and a complex mathematical approach.
We think that our simple analytical method could be implemented in different simulation codes for studying the electrical behaviour of the future DG SOI MOSFET based integrated circuits.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 804 - 807
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling