Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology
Williams R.Q., Chidambarrao D., McCullen J.H., Narasimha S., Mitchell T.G., Onsongo D., IBM Corporation, US
This work presents a novel methodology for a physically-based, layout-dependent nitride liner stress model that works with readily-available compact models. The methodology includes a data-calibrated, semi-empricial model and is tightly-coupled to circuit netlist extraction for [...]