Compact Modeling of Nonlinearities in Submicron MOSFETs

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Low power operation in RF CMOS circuits requiring low-distortion levels is often difficult to achieve due to the exponential relationship between drain current (IDS) and gate-to-source voltage (VGS) in subthreshold region.
Our contribution in this work is to offer very compact but still accurate expressions for predicting the third-order nonlinearities as function of the transistor operating point

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 753 - 756
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1