The models presented by Lu and Taur, , for lightly doped double gate and surrounding gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these equations based on the Lambert function, . These solutions are shown to be accurate compare with exact numerical solutions. Quantum effect corrections to the IDS – VDS formulae are also included, and these are based on analytic solutions obtained for the density gradient model, .
 H. Lu and Y. Taur, “Physics-Based, Non-Charge-Sheet Compact Modeling of Double Gate MOSFETs,” Nanotech, Anaheim, Ca., 2005.
 A. Ortiz-Conde, F. J. Garcia Sanchez, M.Guzman, “Exact Analytical Solution of Channel Surface Potential as an Explicit Function of Gate Voltage in Undoped-body MOSFETs Using the Lambert W function and a Threshold Voltage Definition Therefrom,” Solid-State Electronics 47 (2003) 2067-2074.
 S. Uno, H. Abebe, and E.Cumberbatch, “Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical Modeling of MOS Structures,” Solid State Devices and Materials, Kobe, Japan, 2005.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 824 - 827
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling