TCAD-based Process Dependant HSPICE Model Parameter Extraction

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This paper describes the methodology for global extraction of HSPICE compact model parameters as explicit polynomial functions of process parameter variations (halo dosage, gate oxidation temperature etc). Electrical data required for extraction is obtained from TCAD process and device simulations. Validation of the extracted models is performed for a 90nm technology node by verifying the predictability of the HSPICE model parameters against the TCAD simulations for a given set of process conditions. Model parameters, thus obtained, are used to understand the behavior of typical design circuit elements using HSPICE.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 776 - 779
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1