Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

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A compact model for the explicit surface potential equation of doped symmetric double-gate MOSFET from Poisson equation with regional approach is presented. It’s scalable for all doping and channel thicknesses and has been proved to agree numerical results very well.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 792 - 795
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 0-9767985-8-1