Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFET

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This paper describes an explicit compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparisons with Atlas simulations. The model was implemented in VerilogA in order to test it and to design circuits. Circuit results of a mixer and an inverter are presented.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 796 - 799
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 0-9767985-8-1