Chandrasekaran K. – TechConnect Briefs

Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models

See G.H., Zhou X., Chandrasekaran K., Chiah S.B., Zhu G.J., Zhu Z.M., Lim G.H., Wei C.Q., Lin S-H, Zhu G.J., Zhu Z.M., Nanyang Technological University, SG

One of the critical problems in Gummel symmetry at higher-order derivatives that still exists in current and next generation MOS compact models has been solved with a simple modification of the mathematical smoothing function. The [...]

Unified Compact Model for Generic Double-Gate MOSFETs

Zhou X., See G.H., Zhu G.J., Zhu Z.M., Chandrasekaran K., Zhu G.J., Zhu Z.M., Rustagi S.C., Lin S-H, Wei C.Q., Lim G.H., Nanyang Technological University, SG

A generic double-gate (DG) MOSFET follows a generalized (input) voltage equation from the first integral of Poisson equation and Gauss' law at the two gates, which is implicit and, in general, non-integrable when the channel [...]

Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

Chandrasekaran K., Zhu Z.M., Zhou X., Shangguan W., See G.H., Chiah S.B., Rustagi S.C., Singh N., Nanyang Technological University, SG

A compact model for the explicit surface potential equation of doped symmetric double-gate MOSFET from Poisson equation with regional approach is presented. It’s scalable for all doping and channel thicknesses and has been proved to [...]

Scalable MOSFET Short-channel Charge Model in All Regions

See G.H., Chiah S.B., Zhou X., Chandrasekaran K., Shangguan W., Zhu Z., Lim G.H., Pandey S.M., Cheng M., Chu S., Hsia L.-C., NTU, SG

Short-channel effects (SCEs) for both intrinsic chargesand extrinsic capacitances need to be modeled when theMOSFET channel is short. The intrinsic SCEs are modeled using bulk-charge sharing and quasi-two dimensional potential barrier loweirng; extrinsic overlap capacitances [...]

Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling

Zhou X., Chandrasekaran K., Chiah S.B., Shangguan W., Zhu Z., See G.H., Mani Pandey S., Lim G.H., Rustagi S., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

In this paper, we extend our unified regional approach to bulk-MOS charge modeling with non-pinned surface potential for various device structures such as PD/FD/UTB SOI and s-DG MOSFETs, including strained-Si channel. The regional solutions make [...]

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technological University, SG

This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]

Unified Regional Charge-based MOSFET Model Calibration

See G.H., Chiah S.B., Zhou X., Chandrasekaran K., Shangguan W., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

This paper presents a methodology to extract device physical parameters, i.e., electrical oxide thickness (tox), channel doping (Nch), and poly-gate doping (Ngate), as well as smoothing parameters in our unified regional charge-based model [1] with [...]

One-Iteration Parameter Extraction for Length/width-dependent Threshold Voltage and Unified Drain Current Model

Chiah S.B., Zhou X., Chandrasekaran K., See G.H., Shangguan W., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

This paper presents calibration approach for our unified length/width-dependent MOSFET drain current (Ids) model [1] with the length/width-dependent threshold voltage (Vt) model [2] for technology characterization in the entire geometry/bias range for CMOS shallow trench [...]

Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches

Zhou X., Chiah S.B., Chandrasekaran K., See G.H., Shangguan W.Z., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

This paper outlines the key features and advantages of the unified regional charge-based approach to MOSFET compact charge modeling in comparison with surfacepotential- based approaches. Physical piecewise solutions are regionally derived from Pao–Sah equation, in [...]

Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs

Chandrasekaran K., Zhou X., Chiah S.B., Nanyang Technology University, SG

Interest in nanotechnology has grown explosively in recent years because of the potential to beneficially impact almost every aspect of our lives. In the future, we can expect technologies that exploit unique nanometer scale phenomena [...]