Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology

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This work presents a novel methodology for a physically-based, layout-dependent nitride liner stress model that works with readily-available compact models. The methodology includes a data-calibrated, semi-empricial model and is tightly-coupled to circuit netlist extraction for accurate results. The model formulation is summarized and simulation results for an SOI implementation are provided.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 858 - 859
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 0-9767985-8-1