In this paper, we extend our unified regional approach to bulk-MOS charge modeling with non-pinned surface potential for various device structures such as PD/FD/UTB SOI and s-DG MOSFETs, including strained-Si channel. The regional solutions make it easy to handle different device structures with explicit asymptotically physical solutions, and the unified solution combines the best features in fs/Qi/Vt-based approaches without the need to solve exactly at flat-band. We show that it is viable to obtain a unified solution scalable with layer thickness and doping, in all regions (accumulation, depletion, weak/volume/strong inversions). In particular, the effect of doping (even unintentional) is studied with the regional approach. The ultimate goal is to have a generic scalable model with selectable accuracy and seamless transition across device types and operations.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 652 - 657
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling