Unified Compact Model for Gate All Around FETs- Nanosheets, Nanowires, Multi Bridge Channel MOSFETs
Agarwal H., Chang H-L, Chauhan Y.S., Duarte J.P., Hu C., Kushwaha P., Lin Y-K., Sachid A., Salahuddin S., University of California Berkeley USA, US
FinFET is in mass production for its capability of scaling below 20nm. Thin silicon Fin surrounded by gate provides a superior channel electrostatics resulting in higher on current (Ion) and better subthreshold swing. The same [...]