Roy A.S. – TechConnect Briefs

Compact Modeling of Noise in non-uniform channel MOSFET

Roy A.S., Enz C.C., Lim T.C., Danneville F., CSEM & EPFL, CH

Compact MOSFET noise models are mostly based on the Klaassen-Prins (KP) method. However, the noise properties of lateral nonuniform MOSFETs are considerably different from the prediction obtained with the conventional KP based methods which, at [...]

A charge based compact flicker noise model including short channel effects

Roy A.S., Enz C.C., EPFL, CH

The low-frequency (LF) noise in MOS devices has been the subject of intensive research during past years. It is becoming a major concern for scaled devices because the LF noise increases as the inverse of [...]

Theory of source-drain partitioning in MOSFET

Roy A.S., Enz C.C., Sallese J.M., EPFL, CH

The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high frequency advanced compact models for MOSFET devices. Recently it has been shown that WD partitioning fails for field dependent mobility or for [...]

On the Compact Modelling of Induced Gate Noise in the MOS Transistor

Roy A.S., Enz C.C., Swiss Federal Institute of Technology, Lausanne (EPFL), CH

This work presents a analytical model to calculate gate related noise parameters for any arbitrary velocity field relationship and discusses some finer point of diffusivity modeling and impact of those effect on gate related noise [...]

A Charge-Based Compact Model of Double Gate MOSFET

Roy A.S., Enz C.C., Sallese J.M., CSEM, CH

To date, a simple physical compact model is still lacking even for the ‘classical’ asymmetric DG MOST because of it’s relatively complex electrostatics. Ref [1] has presented an exact solution for symmetric DG MOST but [...]