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HomeAffiliationsSan Jose State University

Affiliations: San Jose State University

Mechanical reliability of fused deposition modeled polymers and composites

Anderson, E.H., Keles, O., San Jose State University, US
Fused deposition modeling (FDM) is the most common additive manufacturing technique for the production of cost effective polymers and composites. In fact, half million FDM systems were sold between 2013 and 2015. FDM is used [...]

VerilogA modeling and simulation of Memristor for circuit application

He, L., Xia, D., San Jose State University, US
In this work, we first investigated the switching mechanisms and the resistive switching behavior that take place in the memristor. Both the bipolar and unipolar switching behaviors are studied. The ionic transportation mechanism is used [...]

An FPGA Architecture Using Vertical Silicon Nanowire Transistors

Bindal, A., Hamedi-Hagh, S., Wickramaratne, D., San Jose State University, US
This study presents an FPGA architecture using vertical silicon nanowire transistors. A complete picture from designing ultra low-power silicon nanowire transistors to their use in an FPGA architecture is given. Post-layout, worst-case rise delay changes [...]

Compact Models for Asymmetric Double Gate MOSFETs

Abebe, H., Cumberbatch, E.C., Morris, H.C., San Jose State University, US
Double-gate MOSFET's are one possible option to further extend CMOS scaling when planar MOSFET's have reached their scaling limit. This paper presents an analytic potential model for long-channel asymmetric double-gate (ADG) MOSFETs. The asymmetry is [...]

An Integrate and Fire Spiking Neuron Using Silicon Nano-Wire Technology

Bindal, A., Hamedi-Hagh, S., San Jose State University, US
This study presents a nanometer-scale Integrate and Fire Spike (IFS) neuron cell using vertically-grown, undoped silicon nano-wire transistors. The design cycle starts with determining individual metal gate work functions for each NMOS and PMOS transistor [...]

Theory/experiments of X-Ray flux effect on periodic lattice distortions in YBCO

Acrivos, J.V., Navacerrada, M.A., Sahibudeen, H.S., San Jose State University, US
The dynamics for the effect of X-ray flux on periodic lattice distortion waves in YBCO (YBa2Cu3O7-d) 50nm films on STO *SrTiO3) is described: The X-ray flux r(t)=photons/s can induce many possible resonant excitations between states, [...]

Compact Models for Double Gate and Surrounding Gate MOSFETs

Abebe, H., Cumberbatch, E., Morris, H., Uno, S., San Jose State University, US
The models presented by Lu and Taur, [1], for lightly doped double gate and surrounding gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these [...]

A Wavelet Method for the Density-Gradient Equation

Limon, A., Morris, H., San Jose State University, US
As MOSFET device lengths have shrunk to submicron level, so too has the oxide thickness steadily reduced. At around 4-5nm thicknesses quantum effects start to become noticeable as electrons are able to tunnel through the [...]

The Design of a Silicon Wire DRAM Cell for Very Dense DRAM Architectures

Aflatooni, K., Bindal, A., San Jose State University, US
In this study, we propose a new DRAM cell that uses a silicon-wire pass transistor stacked on top of a high-dielectric capacitor rated of holding industry-standard 32 fCoulomb charge. We show that the performance of [...]

SOS Gate Capacitance Modeling

Abebe, H., Cumberbatch, E.C., Morris, H.C., San Jose State University, US
A gate capacitance model for the SOS structure has been developed. The spatial dependence of the potential defines the changes in the charge density as well as the boundary conditions between the layers. The SOS [...]

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