## Papers:

### Consistency of compact MOSFET models with the Pao-Sah formulation: consequences for small-signal analysis

Compact models for the MOSFET are based on the decomposition of the two-dimensional problem into two one-dimensional problems. Since a compact MOSFET model core consists of an input voltage equation, and an output current equation, [...]

### HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Miura-Mattausch M., Sadachika N., Miyake M., Navarro D., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Inagaki R., Furui Y.,

*Hiroshima University, JP*HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an [...]

### Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I. Effects of Remote Boundary Conditions and Body Contacts

Analytical solutions and computed characteristics for long-wide-channel thick-base MOS transistors are reported. The second generation industrial-consensus surface potential approach is used. Decomposition of the 2-Dimensional transistor problem into two 1-D problems follows the 1966-Pao-Sah current- [...]

### Compact Modeling Framework for Short-Channel DG and GAA MOSFETs

To achieve sufficient accuracy in the compact modeling of short-channel, nanoscale DG and GAA MOSFETs, the multi-dimensionality of the body potential and the electronic charge distribution has to be accurately described. In sub-threshold, the device [...]

### Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents [...]

### A Versatile Multigate MOSFET Compact Model: BSIM-MG

BSIM-MG is a surface-potential based compact model for multi-gate MOSFETs such as FinFETs fabricated on either SOI or bulk substrates. It can model transistors with the gate controlling two, three, or four sides of the [...]

### 3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices

We present 3-D analytical models for subthreshold swing, threshold voltage and threshold volatge roll-off of undoped FinFET devices. After solving the 3-D Poisson equation, in which the mobile charge term was included, we have obtained [...]

### A PSP based scalable compact FinFET model

Smit G.D.J., Scholten A.J., Serra N., Pijper R.M.T., van Langevelde R., Mercha A., Gildenblat G., Klaassen D.B.M.,

*NXP Semiconductors, NL*A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly [...]

### A Unified View of Drain Current Models for Undoped Double-Gate SOI MOSFETs

In this paper we discuss the compact modeling framework for undoped double-gate SOI MOSFETs. Core compact models, including the analysis for surface potential and drain current for various device structures are discussed and compared. Then, [...]

### Analytic Charge Model for Double-Gate and Surrounding-Gate MOSFETs

An analytic charge model for both double-gate (DG) and surrounding-gate (SG) MOSFETs is presented. With only the mobile charge term, Poisson’s equation is rigorous solved and the analytic electrostatic potential is derived. The development of [...]

### Unified Compact Model for Generic Double-Gate MOSFETs

Zhou X., See G.H., Zhu G.J., Zhu Z.M., Chandrasekaran K., Zhu G.J., Zhu Z.M., Rustagi S.C., Lin S-H, Wei C.Q., Lim G.H.,

*Nanyang Technological University, SG*A generic double-gate (DG) MOSFET follows a generalized (input) voltage equation from the first integral of Poisson equation and Gauss' law at the two gates, which is implicit and, in general, non-integrable when the channel [...]

### Carbon Nanotube Transistor Compact Model

The principal challenges for the semiconductor industry at the nanoscale are: (1) power and performance optimization, (2) device fabrication and control of variations at the nanoscale, and (3) integration of a diverse set of materials [...]

### Modeling of FET Flicker Noise and Impact of Technology Scaling

Ongoing scaling of device dimensions, including the introduction of new channel materials and device structures, as well as the incorporation of novel gate-stack materials, has major implications on noise performance metrics. In particular, flicker noise [...]

### Modeling Process Variations Using a Compact Model

Inclusion of manufacturing variations has become an important part of static timing analysis. Existing statistical timing analysis methods involve the use of time-consuming circuit simulations or use fit polynomials. Previous efforts at modeling parameter variations [...]

### Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the [...]

### Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits

The impact of the gate induced drain leakage and impact ionization currents on hysteresis of PD FB SOI circuits is examined, and a physical understanding is provided. Measured silicon data from 90nm and 65nm PD [...]

### Compact modeling of drain current in Independently Driven Double-Gate MOSFETs

As CMOS scaling is approaching its limits, Double-Gate (DG) MOSFET is envisaged as a possible alternative to the conventional bulk MOSFET. In spite of excellent electrical performances due to its multiple conduction surfaces, conventional DG [...]

### Explicit Short Channel Compact Model of Independent Double Gate Mosfet

This paper describes an explicit short channel compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparison with Atlas simulations. The model was implemented in [...]

### A Computationally Efficient Method for Evaluating Distortion in DG MOSFETs

In this paper we have generalized the correlation between Integral Nonlinearity Function (INLF) and Total Harmonic Distortion (THD) of independently driven double -gate (IDDG) MOSFETs.

### Analysis of Halo Implanted MOSFETs

MOSFETs with heavily doped regions at one or both ends of the channel exhibit some quantitative differences in electrical behavior compared to devices with laterally unform channel doping. These can include a peakiness to the [...]

### Modeling the electrical characteristics of FET-type sensors for biomedical applications

Uniquely examining and identifying biological pathogens is of great importance in health care, as it facilitates early detection, isolation and possibly prevention of many diseases. Availability of highly efficient and easily produced sensors could have [...]

### Non-standard geometry scaling effects

The impact of process and geometry effects on important electrical parameters of SiGe HBTs as a function of emitter width is investigated and explained using device and circuit simulations. The goal is to provide a [...]

### Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models

See G.H., Zhou X., Chandrasekaran K., Chiah S.B., Zhu G.J., Zhu Z.M., Lim G.H., Wei C.Q., Lin S-H, Zhu G.J., Zhu Z.M.,

*Nanyang Technological University, SG*One of the critical problems in Gummel symmetry at higher-order derivatives that still exists in current and next generation MOS compact models has been solved with a simple modification of the mathematical smoothing function. The [...]

### HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications

Miyake M., Sadachika N., Matsumoto K., Navarro D., Ezaki T., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S.,

*Hiroshima University, JP*For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM. HiSIM-Varactor includes the majority [...]

### PTAT voltage generator based on an MOS voltage divider

Little has been published on the use of charge-based compact models as tools for variable operating temperature design. We analyzed an MOS voltage divider applying the ACM model obtaining an equation relating the voltage at [...]

### LINFET: A BSIM class FET model with smooth derivatives at Vds=0

The linearity of compact transistor models near Vds=0 is important for designing RF circuits. Currently compact models such as BSIM3/4 have problems around this bias point due to discontinuities in the derivatives. Recently, the PSP [...]

### Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs

The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined [...]

### A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete [...]

### An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus [...]

### Compact Models for Asymmetric Double Gate MOSFETs

Double-gate MOSFET's are one possible option to further extend CMOS scaling when planar MOSFET's have reached their scaling limit. This paper presents an analytic potential model for long-channel asymmetric double-gate (ADG) MOSFETs. The asymmetry is [...]

### Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact Model

We have proposed a compact model for four-terminal DG MOSFETs based on double charge-sheet model, with the velocity saturation effect as a function of carrier density profile inside the channel, with explicit handling of drain [...]

### An Efficient Sectionalized Modeling Approach for Introduction of

Modeling of breakdown phenomena is becoming central problem in today's design of high-speed bipolar circuits. It is especially important for the output stages that should simultaneously provide speed and output signal power. To this end, [...]

### A Setup for Automatic MOSFET Mismatch Characterization under a Wide Bias Range

Mismatch is the denomination of time-independent variations between identically designed components. In analog circuits, the spread in the dc characteristics of supposedly matched transistors results in inaccurate or even anomalous circuit behavior. Also, for digital [...]

### An Approximate Explicit Solution to General Diode Equation

an approximate explicit solution for a normalized diode has been developed in this paper. The accuracy of the diode current calculation and its derivative prediction has also been verified compared with the result of the [...]

### Methodology and Design Kit Integration of a Broadband Compact Inductor Model

A physics-based broadband inductor model is presented that accurately captures geometry scaling, process statistics, and temperature dependence. The model utilizes an accurate and physical skin effect formulation, with substantial improvements over previous methods, along with [...]

### A Compact Model for Temperature and Frequency Dependence of Spiral Inductor

Spiral inductors fabricated using a 90nm CMOS process have been characterized and analyzed. The extracted series resistance increases with frequency and temperature. The extracted resistance temperature coefficient exhibits a strong dependence on operating frequency. It [...]

### SPICE Modeling of Hook Shaped Idsat Curve for I/O 2.5V MOS Transistors

In this paper, we demonstrated how we have modified the mobility equation to accurately model the I-V characteristics of I/O 2.5V MOS transistors. Our aim is to model the effect of mechanical STI stress in [...]

### HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations

This paper presents HiSIM speed and convergence advantage against BSIM4 and PSP on a large variety of circuits such as memories, MPUs, PLLs, A/D and D/A converters, mixers etc.

### Process Aware Hybrid SPICE Models using TCAD and Silicon Data

This paper describes the methodology for extraction of process dependant hybrid SPICE compact model parameters using calibrated TCAD data and measured Silicon data. Process dependence of electrical curves is, initially, estimated using TCAD data set. [...]

### A Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport

In this paper, we present a simplified circuit compatible analytical device model of nanowire FET for both ballistic and drift-diffusion transport, which can be efficiently used in any conventional circuit simulator like SPICE. The developed [...]

### Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors

In this work it is investigated the consequences of the design of the emitter pedestal in the electric DC and AC performance of GaInP/GaAs HBTs using numerical modeling TCAD tool. Two different HBTs are studied [...]

### Simulation of Buffer-Related Current Slump in AlGaN/GaN HEMTs

Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves [...]

Journal: TechConnect Briefs

Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Published: May 20, 2007

Industry sector: Sensors, MEMS, Electronics

Topic: Compact Modeling

ISBN: 1-4200-6184-4