3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices


Keywords: , , , , ,

We present 3-D analytical models for subthreshold swing, threshold voltage and threshold volatge roll-off of undoped FinFET devices. After solving the 3-D Poisson equation, in which the mobile charge term was included, we have obtained an expression of the electrostatic potential through the device. We have validated the threshold voltage, subthreshold swing, and threshold voltage roll-off models by comparison with 3-D numerical simulations and measured values; a good agreement with both 3-D numerical simulation and the experimental results has been observed.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 515 - 519
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4