Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model
Chen, Z.H., Lin, S-H, Selvakumar, R., Srikanth, M.K., Wei, C.Q., Yan, Y.F., Zhang, J.B., Zhou, X., Zhu, G.J., Nanyang Technological University, SG
This paper presents benchmark tests of the unified compact model (Xsim) for double-gate (DG) and gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs, which has been developed over the years with the unified regional modeling (URM) approach. The [...]