A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

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A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete agreement with 2-D numerical simulation results without any fitting term or parameter

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 637 - 640
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4