HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

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HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an improved model consistency, which enables modeling of the technology variation accurately. HiSIM2.4.0 includes also the binning option to take into account newly appearing device features which are not modeled yet.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 479 - 484
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 1-4200-6184-4