Lu D. – TechConnect Briefs

Two-Dimensional Nanoporous Silicates and Their Potential Applications

Zhong J.Q., Kestell J., Akter N., Kim T., Wang M., Lu D., Galuskina I., Stacchiola D.J., Boscoboinik J.A., Brookhaven National Laboratory, US

Ultra-thin two-dimensional inorganic nanoporous silicates have been recently synthesized. They are as thin as 0.5 nm, can be produced in the form of ordered structures or glasses and doped with other elements, such as aluminum. [...]

Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs

Karim M.A., Venugopalan S., Chauhan Y.S., Lu D., Niknejad A., Hu C., University of California at Berkeley, US

MOSFET intrinsic capacitances going negative is a major concern in the compact model community. Negative Intrinsic Capacitances (NIC) can raise non-convergence issues in circuit simulators. In some cases NICs can be explained using physical phenomena. [...]

Compact Models for sub-22nm MOSFETs

Chauhan Y.S., Lu D., Venugopalan S., Morshed T., Karim M.A., Niknejad A., Hu C., University of California-Berkeley, US

FinFET and UTBSOI FET (or ETSOI) are the two promising multi-gate FET candidates for sub-22nm CMOS technology. BSIM multi-gate FET models (BSIM-CMG and BSIM-IMG) are the surface potential based physical compact models for FinFET and [...]

Nanoporous thin-film waveguide resonance sensors with wavelength interrogation over a broad bandwidth

Qi Z-M, Zhang Z., Liu Q., Lu D., Institute of Electronics, Chinese Academy of Sciences, CN

Nanoporous dielectric film based leaky-mode waveguide resonance sensors have attracted considerable attention because of their interesting features [1-4]. Such sensors generally operate in the angular interrogation mode [1-3]. The first application of the wavelength interrogation [...]

A Versatile Multigate MOSFET Compact Model: BSIM-MG

Hu C., Dunga M., Lin C.H., Lu D., Niknejad A., University of California-Berkeley, US

BSIM-MG is a surface-potential based compact model for multi-gate MOSFETs such as FinFETs fabricated on either SOI or bulk substrates. It can model transistors with the gate controlling two, three, or four sides of the [...]