The PSP model has been extensively evaluated for it’s abililty accurately match IV and CV characteristics MOSFETs measured on a single die. This enables accurate prediction of circuit behavior for circuits made of transistors which are very similar to the typical devices which were measured. However even within a single die unavoidable manufacturing variations lead to difference in MOSFET characteristics. Addition factors cause variation between wafers and lots. We examine various random and systematic sources of variation and attempt to model them by varying the PSP model parameters. We investigate Monte Carlo modeling of distributions as well fixed and user definable corners.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 554 - 557
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling