A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, is very suitable for such simulations as it offers an accurate description of not only the currents, but also of the (trans-)conductance and capacitances. Moreover, this surface potential based model is continuous over all operating conditions (subthreshold, linear, saturation). The model is fully scalable and will be demonstrated to describe a full range of device geometries, from the long-channel limit down to the shortest channels, with a single set of parameters.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 520 - 525
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling