Compact models for the MOSFET are based on the decomposition of the two-dimensional problem into two one-dimensional problems. Since a compact MOSFET model core consists of an input voltage equation, and an output current equation, a consistent compact model must approximate these two (orthogonal) equations consistently. In this study we will review the main compact models, beginning with the Pao-Sah model and including surface potential, charge controlled and classical strong inversion models. A simple consistency test is applied to all models and the consequences of a model failing the test, for small-signal analysis and design, are highlighted.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 474 - 478
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling