Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

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MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the correlation between them. This paper describes a method of simultating the variation included the geometric dependence of the correlations arising from common halo and separate Vt implants in the devices.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 562 - 565
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 1-4200-6184-4