Niknejad A. – TechConnect Briefs

Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control

Khandelwal S., Chauhan Y.S., Karim M.A., Venugopalan S., Sachid A., Niknejad A., Hu C., Norwegian University of Science & Technlogy, NO

An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated [...]

BSIM6: Symmetric Bulk MOSFET Model

Chauhan Y.S., Karim M.A., Venugopalan S., Khandelwal S., Niknejad A., Hu C., University of California-Berkeley, US

BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry etc. [...]

Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs

Karim M.A., Venugopalan S., Chauhan Y.S., Lu D., Niknejad A., Hu C., University of California at Berkeley, US

MOSFET intrinsic capacitances going negative is a major concern in the compact model community. Negative Intrinsic Capacitances (NIC) can raise non-convergence issues in circuit simulators. In some cases NICs can be explained using physical phenomena. [...]

Compact Models for sub-22nm MOSFETs

Chauhan Y.S., Lu D., Venugopalan S., Morshed T., Karim M.A., Niknejad A., Hu C., University of California-Berkeley, US

FinFET and UTBSOI FET (or ETSOI) are the two promising multi-gate FET candidates for sub-22nm CMOS technology. BSIM multi-gate FET models (BSIM-CMG and BSIM-IMG) are the surface potential based physical compact models for FinFET and [...]

A Versatile Multigate MOSFET Compact Model: BSIM-MG

Hu C., Dunga M., Lin C.H., Lu D., Niknejad A., University of California-Berkeley, US

BSIM-MG is a surface-potential based compact model for multi-gate MOSFETs such as FinFETs fabricated on either SOI or bulk substrates. It can model transistors with the gate controlling two, three, or four sides of the [...]

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]

An Advanced Surface-Potential-Plus MOSFET Model

He J., Xi X., Chan M., Niknejad A., Hu C., University of California at Berkeley, US

Like other surface-potential based model, our surface-potential-plus model starts with charge-sheet approximation, uses the quasi-Fermi-potential to integrate drift and diffusion current and formulates an inversion charge equation that can be analytically solved for given terminal [...]

Challenges in Compact Modeling for RF and Microwave Applications

Niknejad A., Dunga M., Heydari B., Wan H., Lin C.H., Emami S., Doan C., Xi X., He J., Heydari B., Hu C., University of California at Berkeley, US

Commercial CMOS chips routinely operate at frequencies up to 5 GHz and exciting new opportunities exists in higher frequency bands such as 3-10 GHz, 17 GHz, 24 GHz, and 60 GHz. Many research groups have [...]

Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction

He J., Xi X., Chan M., Niknejad A., Hu C., University of California-Berkeley, US

The linear cofactor difference extrema of metal-oxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are [...]

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

He J., Xi X., Chan M., Niknejad A., Hu C., University of California-Berkeley, US

An exact analytic model for undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the mobile charge density in the 1-D Poissons equation. The formulation starts with deriving a close [...]