Double-gate MOSFET’s are one possible option to further extend CMOS scaling when planar MOSFET’s have reached their scaling limit. This paper presents an analytic potential model for long-channel asymmetric double-gate (ADG) MOSFETs. The asymmetry is due to a difference in the work functions of the two gates. Taur has derived equations from the exact solution to Poisson’s and current continuity equation without the charge-sheet approximation. In previous work by the authors it was shown that, by means of the Lambert function, compact formulae could be derived from Taur’s equations for the symmetric double-gate (SDG) case. In this paper we show that these results of can be extended to the asymmetric case and we construct generalized compact formulae for an ADG device that are suitable for use in SPICE type simulators.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 649 - 653
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling