Non-standard geometry scaling effects


Keywords: , , ,

The impact of process and geometry effects on important electrical parameters of SiGe HBTs as a function of emitter width is investigated and explained using device and circuit simulations. The goal is to provide a guideline for identifying such effects, especially those causing non-standard geometry scaling, in order to be able to include them in the parameter extraction for geometry scalable physics-based compact models. Simple extensions of the standard scaling law are suggested, which are suitable for compact modeling. Experimental results exhibting some of the effects will be shown as demonstration.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 603 - 608
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4