Lehmann S.
Technische Universität Dresden, DE
Keywords: compact model, geometry scaling, non-standard, physics-based
The impact of process and geometry effects on important electrical parameters of SiGe HBTs as a function of emitter width is investigated and explained using device and circuit simulations. The goal is to provide a guideline for identifying such effects, especially those causing non-standard geometry scaling, in order to be able to include them in the parameter extraction for geometry scalable physics-based compact models. Simple extensions of the standard scaling law are suggested, which are suitable for compact modeling. Experimental results exhibting some of the effects will be shown as demonstration.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 603 - 608
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4