Pijper R.M.T. – TechConnect Briefs

RF-noise modeling in MOSFETs: excess noise, symmetry, and causality

Juge A., Klaassen D.B.M., Pijper R.M.T., Scheer P., Scholten A.J., Smit G.D.J., Tiemeijer L.F., van der Toorn R., NXP Semiconductors, NL

Modeling of RF-noise in MOSFET channels is one of the cornerstones for RF-CMOS-circuit design. Deep sub-micron technology nodes necessitate a proper treatment of excess noise as well as detailed modeling of parasitics. In addition, demanding [...]

A PSP based scalable compact FinFET model

Gildenblat G., Klaassen D.B.M., Mercha A., Pijper R.M.T., Scholten A.J., Serra N., Smit G.D.J., van Langevelde R., NXP Semiconductors, NL

A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly [...]