TechConnect Briefs
  • Briefs Home
  • Volumes
  • About
    • TechConnect Briefs
    • Submissions
    • Editors
  • TechConnect
HomeAuthorsWachnik R.

Authors: Wachnik R.

Experiment and Model for Distance-Dependent Mismatch

Lu N., Zamdmer N., Wachnik R., IBM, US
We study distance-dependent mismatch and spatial correlation problems both experimentally and theoretically. The two problems are intimately connected. We present our hardware results and, using the relationship between mismatch and correlation, show that the relationship [...]

New Elements and Features in the Process Design Kits for a FinFET Technology

Lu N., Baizley A., Guan X., Johnson J., McCullen J., Ozbek A., Rahman A., Wang H., Yu M., Zemke C., Rausch W., Wachnik R., IBM, US
Parasitic resistance is a primary performance constraint in FinFET technologies. We report that new and innovative elements and features have been introduced into Process Design Kits for 14nm FinFET technology. They enable accurate and efficient [...]

A Fully Automated Method to Create Monte-Carlo MOSFET Model Libraries for Statistical Circuit Simulations

Wang J., Trombley H., Watts J., Randall M., Wachnik R., IBM Semiconductor Research and Development Center, US
As the MOSFET continues to shrink, device-to-device variations become increasingly important. Therefore, it is critical to develop accurate, Monte-Carlo (MC) models that capture various device variations to allow statistical circuit simulations. To model the global [...]

RF Modeling of 45nm Low-Power CMOS Technology

Wang J., Li H., Pan L.H., Gogineni U., Groves R., Jagannathan B., Na M-H, Tonti W., Wachnik R., IBM Semiconductor Research and Development Center, US
As CMOS has grown to be one of the principle technologies for RF IC design, accurate modeling of MOSFETs at high frequencies becomes increasingly important. In this paper, we present an advanced RF modeling work [...]

Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

Park J-E, Park S-J, Liang C-H, Assenmacher J., Watts J., Park J-E, Park S-J, Wachnik R., IBM, US
MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the [...]

About TechConnect Briefs

TechConnect Briefs is an open access journal featuring over 10,000 applications-focused research papers, published by TechConnect and aligned with over 20 years of discovery from the annual Nanotech and the TechConnect World Innovation Conferences.

Full Text Search

TechConnect World

June 13-15, 2022 • Washington, DC

TechConnect Online Community

» Free subscription!

Topics

3D Printing Advanced Manufacturing Advanced Materials for Engineering Applications AI Innovations Biofuels & Bioproducts Biomaterials Cancer Nanotechnology Carbon Capture & Utilization Carbon Nano Structures & Devices Catalysis Chemical, Physical & Bio-Sensors Coatings, Surfaces & Membranes Compact Modeling Composite Materials Diagnostics & Bioimaging Energy Storage Environmental Health & Safety of Nanomaterials Fuel cells & Hydrogen Graphene & 2D-Materials Informatics, Modeling & Simulation Inkjet Design, Materials & Fabrication Materials Characterization & Imaging Materials for Drug & Gene Delivery Materials for Oil & Gas Materials for Sustainable Building MEMS & NEMS Devices, Modeling & Applications Micro & Bio Fluidics, Lab-on-Chip Modeling & Simulation of Microsystems Nano & Microfibrillated Cellulose Nanoelectronics Nanoparticle Synthesis & Applications Personal & Home Care, Food & Agriculture Photonic Materials & Devices Printed & Flexible Electronics Sensors - Chemical, Physical & Bio Solar Technologies Sustainable Materials Water Technologies WCM - Compact Modeling
  • Sitemap
  • Contact

Copyright © TechConnect a Division of ATI | All rights reserved.