Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs


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Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents in nanoscale DG FinFETs. The latter, modeled in two dimensions with bulk inversion, increases drive current and, most significantly, gate capacitance, in nanoscale DG MOSFETs.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 510 - 511
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4